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Si5511DC
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = - 250 μA
I D = 250 μA
I D = - 250 μA
I D = 250 μA
I D = - 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
- 30
24.2
- 23.1
3.6
2.3
V
mV/°C
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 12 V
N-Ch
P-Ch
N-Ch
P-Ch
0.7
- 0.7
2
-2
100
- 100
V
nA
V DS = 30 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
P-Ch
N-Ch
-1
10
μA
V DS = - 30 V, V GS = 0 V, T J = 55 °C
P-Ch
- 10
On-State Drain Current b
I D(on)
V DS ≤ 5 V, V GS = 4.5 V
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = 4.5 V, I D = 4.8 A
N-Ch
P-Ch
N-Ch
15
- 10
0.045
0.055
A
Drain-Source On-State Resistance b
R DS(on)
V GS = - 4.5 V, I D = - 2.3 A
V GS = 2.5 V, I D = 3.8 A
P-Ch
N-Ch
0.125
0.075
0.150
0.090
Ω
V GS = - 2.5 V, I D = 1.8 A
P-Ch
0.213
0.256
Forward Transconductance b
g fs
V DS = 15 V, I D = 4.8 A
V DS = - 15 V, I D = - 2.3 A
N-Ch
P-Ch
10.8
6.56
S
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C iss
C oss
C rss
Q g
N-Channel
V DS = 15 V, V GS = 0 V, f = 1 MHz
P-Channel
V DS = - 15 V, V GS = 0 V, f = 1 MHz
V DS = 15 V, V GS = 5 V, I D = 4.8 A
V DS = - 15 V, V GS = - 5 V, I D = - 3.2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
435
260
65
55
30
42
4.7
4.1
4.2
7.1
6.2
6.3
pF
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q gs
Q gd
R g
N-Channel
V DS = 15 V, V GS = 4.5 V, I D = 4.8 A
P-Channel
V DS = - 15 V, V GS = - 4.5 V, I D = - 3.2 A
f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3.8
1.1
0.6
0.9
1.85
2.7
7.7
4.6
nC
Ω
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Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
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